Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

Samsung plans record-breaking 400-layer V10 NAND chip according to new report

Nov 9, 2024 - 17:00

Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

Samsung plans record-breaking 400-layer V10 NAND chip according to new report

Tags:

Previous Article

Your next smartwatch could be battery-free –and powered by your skin

GoPro Max 2 hit by further delays – 2025 is the earliest we'll see the 360-degre...

Related Posts

Ukraine destroys scores of Russian drones as long-range attacks continue

Ukraine destroys scores of Russian drones as long-range...

Sep 7, 2024

DeSantis to sit down with Morning Joe as part of media blitz

DeSantis to sit down with Morning Joe as part of media ...

Oct 8, 2023

Jeremy Corbyn’s seat in Islington North is up for grabs, but who could stand against him?

Jeremy Corbyn’s seat in Islington North is up for grabs...

May 16, 2024